Industrial-grade vacuum coating system integrating magnetron sputtering (RF/DC/HiPIMS) and cathodic arc evaporation. Designed for continuous, multi-layer, alloy, and nano-composite thin-film deposition at production scale.
Technical Specifications
|
Parameter |
Specification Value |
|
Ultimate Vacuum Pressure |
<= 5.0 x 10^-4 Pa (Turbo-molecular and roots-rotary pump configuration) |
|
Chamber Dimensions |
Custom sizing from D 600 mm x 600 mm to D 1500 mm x 1500 mm (304/316L electro-polished stainless steel) |
|
Deposition Sources |
Configurable: 2-6 magnetron sputtering cathodes / 2-4 arc sources |
|
Substrate Bias Power |
0 to -1000 VDC adjustable (pulsed DC for dielectric substrates) |
|
Film Thickness Uniformity |
<= +/- 3% across standard planar holder (via dynamic planetary rotation) |
|
Substrate Temperature |
Ambient to 650°C (+/- 2°C PID closed-loop control) |
|
Power Distribution |
RF (13.56 MHz), DC, Pulsed DC, and Mid-Frequency (MF) with arc suppression |
Key Features
Dual-Technology Integration: Combines sputtering (smooth, amorphous compound films) and cathodic arc (high-ionization metal/alloy deposition) in one pump-down cycle.
Closed-Loop Gas Management: Mass Flow Controllers (MFCs) paired with optical emission monitoring (OEM) stabilize reactive gas partial pressures.
Mechanical Isolation: Multi-axis planetary drives isolate mechanical bearings from the process zone, preventing particulate contamination.
Thermal Architecture: Double-walled water-cooled chamber walls and radiation shielding prevent thermal distortion during high-power operation.
Automation Core: Siemens S7-1500 PLC and WinCC SCADA architecture for real-time interlock, gas, and power monitoring.
Vacuum System Configuration
Roughing Train: Direct-drive rotary vane pumps backed by Roots blowers with magnetic fluid seals.
High Vacuum: Magnetically levitated turbo-molecular pumps (1200 - 3200 L/s) or cryogenic pumps.
Diagnostics: Integrated Helium mass spectrometer test ports and automated sequencing interlocks.
Materials & Substrate Compatibility
Target Materials:
Metals: Ti, Cr, Al, Zr, Cu, TiAl, CrAl, Si
Ceramics/Compounds: TiN, CrN, TiAlN, DLC, Al2O3, SiO2
Substrates: Tool Steels (H13, M2, carbide inserts), Titanium/Aluminum structural alloys, engineering ceramics, and silicon wafers.
Applications & Proven Performance
Cutting Tools: Low-friction, high-hardness multi-layer coatings (TiAlN/TiN) for extended tool life under dry high-speed machining.
Automotive: Wear and anti-scuffing coatings for piston rings and fuel injection pins.
Aerospace: Oxidation-resistant thermal barrier and protective films on compressor blades and fasteners.
Optics & Electronics: Conductive transparent oxides (ITO) and optical interference filters.
Customization Options
Chamber Geometry: Rectangular box configurations for batch rack loading or cylindrical inline geometries.
Source Retrofitting: Interchangeable cathode mounting flanges for field conversion to CFUBMS.
Plasma Etching: Kaufmann-type ion guns or hollow cathode sources for in-situ substrate cleaning.
Quality Control & Factory Testing
Vacuum Integrity: Helium leak test threshold <= 1 x 10^-9 Pa*m^3/s.
Surface Finish: Chamber internal welds electro-polished to Ra <= 0.4 um.
FAT: 72-hour continuous dry-run test of vacuum, motion, and safety interlock loops prior to crating.
Compliance Standards: Built to CE machinery directives and ISO 9001 standards. (Trust Badge Icons: ISO 9001, CE, UL)
Installation & Technical Support
Documentation Bundle: P&ID schematics, electrical wiring diagrams, PLC source logic, and CE/UL compliance dossiers.
Commissioning: Field engineers supervise mechanical positioning, utility hookups, and leak check verification.
SAT & Recipe Handover: On-site baseline test runs and recipe optimization.
FAQ
Q: What is the pump-down time to base pressure?
A: Reaches < 5.0 x 10^-4 Pa within 45 minutes under clean, dry, and ambient thermal conditions.
Q: Can the system switch between DC and RF sputtering mid-process?
A: Yes. The power matrix allows software-controlled sequencing between DC, pulsed DC, and RF without breaking vacuum.
Q: What utilities are required on-site?
A: Chilled water (15 to 20°C at 0.3 to 0.4 MPa), compressed air (0.6 MPa), high-purity process gases (Ar, N2, O2 at 99.999%), and dedicated 3-phase industrial power.
Q: How is substrate temperature regulated during deposition?
A: Integrated infrared pyrometers coupled with radiant heater banks and PID closed-loop control.
Hot Tags: pvd composite thin film system, China pvd composite thin film system manufacturers, suppliers, factory, new generation thin film equipment, thin film equipment for additive manufacturing, thin film equipment for air purification, thin film equipment for flexible electronics, thin film equipment for precision manufacturing, thin film equipment for printed electronics
