The EBE-Series High Vacuum Electron Beam Evaporation System deposits high-purity thin films for optical, semiconductor, and metallurgical applications. By directing a magnetically focused electron beam onto source materials inside a vacuum chamber, the system achieves localized heating and rapid vaporization. This method prevents crucible contamination and processes refractory metals and high-purity dielectrics effectively.
The stainless steel chamber integrates cryopumps or turbomolecular pumps, reaching base pressures below 5 x 10^-5 Pa to minimize residual gas incorporation during film growth.
Technical Specifications
|
Parameter |
Specification |
|
Ultimate Vacuum Pressure |
< 5 x 10^-5 Pa (after 4-hour bake-out) |
|
Pump-Down Time |
< 15 min to 1 x 10^-3 Pa (empty, clean chamber) |
|
E-Gun Power Rating |
6 kW to 15 kW (sweep frequency up to 100 Hz) |
|
E-Gun Configuration |
4-pocket or 6-pocket indexable crucible (10 cc to 40 cc) |
|
Substrate Holder Size |
Accommodates substrates up to diameter 200 mm or custom carrier plates |
|
Substrate Rotation Speed |
0 to 30 RPM (variable speed with adjustable tilt) |
|
Film Thickness Uniformity |
+/- 1% to +/- 2% across 100 mm radius (planetary fixture) |
|
Chamber Material |
304L stainless steel (electropolished internal finish, Ra < 0.2 um) |
Key Features
Direct E-Beam Heating: Bypasses resistive boat limits; melts high-melting-point materials including tungsten, platinum, and alumina.
Programmable Beam Sweep: Dual-axis electromagnetic coils distribute the beam across the evaporant surface, preventing cratering and ensuring uniform material consumption.
Multi-Pocket Indexing: Water-cooled copper crucibles enable sequential multi-layer deposition without breaking vacuum.
QCM Rate Monitoring: Dual quartz crystal sensors monitor deposition rate and film thickness, linking directly to the PLC/PID controller.
Safety Architecture: Hardware interlocks protect against cooling water failure, high chamber pressure, and door seal leakage.
Vacuum System Configuration
Roughing Stage: Dual-stage rotary vane pump paired with a roots blower achieves fast roughing down to 10 Pa.
High Vacuum Stage: Turbo-molecular pump (1200 L/s to 2200 L/s) coupled with a closed-loop helium cryogenic pump, isolated by pneumatic gate valves.
Pressure Monitoring: Full-range Pirani/Cold Cathode gauges track chamber pressure from atmosphere to ultra-high vacuum.
Diagnostics: KF and CF flanged ports accommodate helium leak detectors.
Film Materials & Substrates
Supported Evaporant Materials
Metals: Ti, Cr, Al, Au, Ag, Pt, Ni, Cu, Ta, W, Mo
Dielectrics: SiO2, TiO2, Ta2O5, Al2O3, ZrO2, HfO2
Compatible Substrates
Single-crystal silicon wafers (diameter 100 mm to diameter 300 mm)
Optical glass, fused silica, and quartz
Alumina (Al2O3) and aluminum nitride (AlN) ceramics
Flexible metal foils and polyimide films (via roll-to-roll modules)
Applications
Semiconductor Fabrication: Metal gate contacts, diffusion barrier layers, and ohmic contacts (Ti/Pt/Au, Cr/Au).
Optical Interference Filters: Multi-layer coatings for laser mirrors, bandpass filters, and anti-reflective lenses using alternating dielectric oxides.
Photovoltaic R&D: Thin-film layers for perovskite and CIGS solar cells.
Functional Coatings: Protective metallic oxide layers for aerospace and sensor components.
Customization
Chamber Geometry: Vertical or horizontal cylindrical chambers scaled for large flat panels or 3D parts.
Substrate Modification: DC/RF biasing for ion-assisted deposition (IAD) and substrate heaters rated up to 600 deg C.
Load-Lock Integration: Single- or dual-wafer load-lock chambers to reduce pump-down cycles during high-throughput runs.
Control Integration: Customized PLC/SCADA scripts supporting recipe automation, data logging, and SECS/GEM communication.
Quality Control
Helium Mass Spectrometer Leak Testing: Chambers tested to thresholds below 1 x 10^-9 Pa*m^3/s prior to factory acceptance.
Electrical Safety Verification: High-voltage insulation resistance, grounding continuity, and interlock tests executed per CE/IEC standards.
Dimensional Inspection: Coordinate measuring machine (CMM) verification of sealing surfaces and flange alignments.
Factory Acceptance Testing (FAT): 72-hour continuous dry run of vacuum pumps, motion assemblies, and power units with full data reports.
Installation & Technical Support
On-Site Commissioning: Engineers manage chamber leveling, utility hookups (water, power, gas, exhaust), and initial vacuum bake-out.
Process Calibration: Technical support establishes baseline deposition rates and film thickness calibration curves during site acceptance testing (SAT).
Spare Parts Dispatch: Critical wear parts-filaments, crucibles, QCM crystals, and vacuum seals-stocked locally.
Remote Diagnostics: Secure diagnostic modules enable real-time PLC log retrieval for rapid troubleshooting.
Frequently Asked Questions
Q: What is the maximum thickness uniformity across a 200 mm substrate?
A: Thickness uniformity is maintained within +/- 1.5% over a 200 mm diameter area when using the planetary rotation fixture.
Q: Can the system handle reactive evaporation processes?
A: Yes. Integrated mass flow controllers (MFCs) inject oxygen, nitrogen, or argon for reactive oxide and nitride film formation.
Q: What utility requirements must be prepared on-site?
A: The system requires a dedicated 3-phase power supply (380V/480V, 50/60 Hz), chilled water (> 40 L/min, 20 +/- 2 deg C), compressed air (0.4 to 0.6 MPa), and a roughing pump exhaust line.
Q: What are the typical lead times?
A: Standard configurations ship in 12 to 16 weeks. Custom systems with load locks or specialized chambers require 20 to 26 weeks from drawing approval to FAT.
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